Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2006, Vol. 17 ›› Issue (1): 29 doi: 10.1016/S1001-8042(06)60007-9

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Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride substrate

DING Yan-Fang 1 ZHU Ming 2 ZHU Zi-Qiang 1 LIN Cheng-Lu 2   

  1. 1  Department of Electronics Science and Technology, East China Normal University, Shanghai 200062, China
    2  Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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DING Yan-Fang ZHU Ming ZHU Zi-Qiang LIN Cheng-Lu. Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride substrate.Nuclear Science and Techniques, 2006, 17(1): 29     doi: 10.1016/S1001-8042(06)60007-9
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Abstract: Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advantages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (AlN), which has a thermal conductivity that is about 200 times higher than that of SiO2 (320 W·m − 1 ·K− 1 versus 1.4 W·m − 1 ·K− 1 ). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electrical characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AlN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the applications of SOI to high temperature conditions.

Key words: Self-heating effect, Silicon-on-aluminum nitride (SOAN), Drain current, Temperature distribution