Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2019, Vol. 30 ›› Issue (7): 116 doi: 10.1007/s41365-019-0634-y


Analyzing the transient effects of Cobalt-60 gamma rays in CIS by Monte Carlo method

Yuan-Yuan Xue1 • Zu-Jun Wang1 • Min-Bo Liu1 • Rui Xu2 • Hao Ning2 • Wen Zhao1 • Bao-Ping He1 • Zhi-Bin Yao1 • Jiang-Kun Sheng1 • Wu-Ying Ma1 • Guan-Tao Dong1   

  1. 1 The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710613, China
    2 School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
  • Received:2018-09-14 Revised:2019-02-19 Accepted:2019-03-20
  • Contact: Zu-Jun Wang
  • Supported by:
    This work was supported by the National Natural Science Foundation of China (Nos. 11805155, 11875223, and 11690043), the Chinese Academy of Sciences strategic pilot science and technology project (No. XDA15015000), the Innovation Foundation of Radiation Application (No. KFZC2018040201), and the Foundation of State Key Laboratory of China (Nos. SKLIPR1803 and 1610).
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Yuan-Yuan Xue, Zu-Jun Wang, Min-Bo Liu, Rui Xu, Hao Ning, Wen Zhao, Bao-Ping He, Zhi-Bin Yao, Jiang-Kun Sheng, Wu-Ying Ma, Guan-Tao Dong. Analyzing the transient effects of Cobalt-60 gamma rays in CIS by Monte Carlo method.Nuclear Science and Techniques, 2019, 30(7): 116     doi: 10.1007/s41365-019-0634-y

Abstract: The objective of this work is to analyze the transient effects of 60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500 x 500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.

Key words: 60Co gamma rays, Transient effects, CMOS image sensor (CIS), Geant4