# Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2019, Vol. 30 ›› Issue (5): 80

• NUCLEAR ELECTRONICS AND INSTRUMENTATION •

### Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

Chang Cai1,2 • Tian-Qi Liu1,2,3 • Xiao-Yuan Li4 • Jie Liu1,2 • Zhan-Gang Zhang5 • Chao Geng4 • Pei-Xiong Zhao1,2 • Dong-Qing Li1,2 • Bing Ye1 • Qing-Gang Ji1,2 • Li-Hua Mo1,2

1. 1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
3 School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
4 Academy of Shenzhen State Microelectronic Co., Ltd., Shenzhen 518004, China
5 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, China
• Received:2018-08-08 Revised:2018-10-10 Accepted:2018-10-20
• Contact: Jie Liu E-mail:j.liu@impcas.ac.cn
• Supported by:
This work was supported by the National Natural Science Foundation of China (Nos. 11690041, 11805244, and 11675233) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of the Electronic Component Laboratory (No. ZHD 201604).
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Chang Cai, Tian-Qi Liu, Xiao-Yuan Li, Jie Liu, Zhan-Gang Zhang, Chao Geng, Pei-Xiong Zhao, Dong-Qing Li, Bing Ye, Qing-Gang Ji, Li-Hua Mo. Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs.Nuclear Science and Techniques, 2019, 30(5): 80
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Abstract: Single event effects of 1-T structure programmable read-only memory (PROM) devices fabricated with a 130-nm complementary metal oxide semiconductor-based thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset (SEU) for radiation-hardened PROMs were measured using a linear energy transfer (LET) ranging from 9.2 to 95.6 MeV cm2 mg−1. The result indicated that the LET threshold for a dynamic bit upset was ~ 9 MeV cm2 mg−1, which was lower than the threshold of ~ 20 MeV cm2 mg−1 for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing 209Bi ions with extremely high LET values (~ 91.6 MeV cm2 mg−1) and large ion fluence (~ 1 × 108 ions cm−2). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the device. This revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a 181Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRÈME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.