# Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2016, Vol. 27 ›› Issue (5): 117

• NUCLEAR ELECTRONICS AND INSTRUMENTATION •

### Effects of total dose irradiation on the threshold voltage of H-gate SOI NMOS devices

Qian-Qiong Wang, Hong-Xia Liu, Shu-Peng Chen, Shu-Long Wang, Chen-Xi Fei, Dong-Dong Zhao

1. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
• Contact: Hong-Xia Liu E-mail:hxliu@mail.xidian.edu.cn
• Supported by:

This work is supported by the Project of National Natural Science Foundation of China (Grant Nos. 61376099, 11235008, 61434007) and the Specialized Research Fund for the Doctoral Program of High Education (Grant No. 20130203130002).

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Qian-Qiong Wang, Hong-Xia Liu, Shu-Peng Chen, Shu-Long Wang, Chen-Xi Fei, Dong-Dong Zhao. Effects of total dose irradiation on the threshold voltage of H-gate SOI NMOS devices.Nuclear Science and Techniques, 2016, 27(5): 117
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Abstract:

This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors (nMOSFETs) in silicon- on-insulator (SOI) technology. Using the subthreshold separation technology, the factor causing the threshold voltage shift was divided into two parts: trapped oxide charges and interface states, the effects of which are presented under irradiation. Furthermore, by analyzing the data, the threshold voltage shows a negative shift at first and then turns to positive shift when irradiation dose is lower. Additionally, the influence of the dose rate effects on threshold voltage is discussed. The research results show that the threshold voltage shift is more significant in low dose rate conditions, even for a low dose of 100 krad(Si). The degeneration value of threshold voltage is 23.4 % and 58.0 % for the front-gate and the back-gate at the low dose rate, respectively.