Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2016, Vol. 27 ›› Issue (1): 7 doi: 10.1007/s41365-016-0015-8

• NUCLEAR ELECTRONICS AND INSTRUMENTATION • Previous Articles     Next Articles

Experimental study on heavy ion single-event effects in flash-based FPGAs

Zhen-Lei Yang 1,2, Xiao-Hui Wang 1, Hong Su 1, Jie Liu 1, Tian-Qi Liu 1, Kai Xi 1,2, Bin Wang 1,2, Song Gu 1,2, Qian-Shun She 1   

  1. 1. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, China
    2. University of Chinese Academy of Sciences, Beijing, 100049, China
  • Contact: Hong Su E-mail:suhong@impcas.ac.cn
Zhen-Lei Yang, Xiao-Hui Wang, Hong Su, Jie Liu, Tian-Qi Liu, Kai Xi, Bin Wang, Song Gu, Qian-Shun She. Experimental study on heavy ion single-event effects in flash-based FPGAs.Nuclear Science and Techniques, 2016, 27(1): 7     doi: 10.1007/s41365-016-0015-8

Abstract:

With extensive use of flash-based field-programmable gate arrays (FPGAs) in military and aerospace applications, single-event effects (SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we present SEE experimental study of a flash-based FPGA from Microsemi ProASIC3 product family. The relation between the cross section and different linear energy transfer (LET) values for the logic tiles and embedded RAM blocks is obtained. The results show that the sequential logic cross section depends not too much on operating frequency of the device. And the relationship between 0 → 1 upsets (zeros) and 1 → 0 upsets (ones) is different for different kinds of D-flip-flops. The devices are not sensitive to SEL up to a LET of 99.0 MeV cm2/mg. Post-beam tests show that the programming module is damaged due to the high-LET ions.

Key words: Single-event effects (SEEs), Flash-based, FPGAs, HIRFL, Heavy ion experiments