Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2017, Vol. 28 ›› Issue (8): 105 doi: 10.1007/s41365-017-0263-2


PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation

Guo-Dong Cheng1,2, Ye Chen1, Long Yan2, Rong-Fang Shen2   

  1. 1 Key Laboratory of Polar Materials and Devices, Ministry of Education of China, East China Normal University, Shanghai 200241, China

    2 Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Jiading Campus, Shanghai 201800, China

  • Supported by:

    Supported by the National Science Foundation of China (Nos. 61076089, 11505265 and 61227902) and the Ministry of Education of China (SRF for ROCS, SEM).

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Guo-Dong Cheng, Ye Chen, Long Yan, Rong-Fang Shen. PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation.Nuclear Science and Techniques, 2017, 28(8): 105     doi: 10.1007/s41365-017-0263-2


Radiation damage in 4H-SiC samples implanted by 70 keV oxygen ion beams was studied using photoluminescence and electron spin resonance techniques. ESR peak of g = 2.0053 and two zero-phonon lines were observed with the implanted samples. Combined with theoretical calculations, we found that the main defect in the implanted 4H-SiC samples was oxygen-vacancy complex. The calculated defect formation energies showed that the oxygen-vacancy centers were stable in n-type 4H-SiC. Moreover, the  and  centers were optically addressable. The results suggest promising spin coherence properties for quantum information science.

Key words: Ion implantation, Electron spin resonance, Photoluminescence, First-principles calculations