Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2011, Vol. 22 ›› Issue (5): 272-276 doi: 10.13538/j.1001-8042/nst.22.272-276

• LOW ENERGY ACCELERATOR AND RADIATION APPLICATIONS • Previous Articles     Next Articles

Electronic structure of In_2O_3 nanowires synthesized at low temperature

YUAN Gang~(1,2) GAO Jing~2 SUN Xuhui~(2,*) ZHOU Xingtai~1   

  1. 1 Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201800,China 2 Institute of Functional Nano and Soft Materials,andjiangsu Key Laboratory for Carbon-based Functional Materials and Devices,Soochow University, Suzhou 215123,China
YUAN Gang, GAO Jing, SUN Xuhui, ZHOU Xingtai. Electronic structure of In_2O_3 nanowires synthesized at low temperature.Nuclear Science and Techniques, 2011, 22(5): 272-276     doi: 10.13538/j.1001-8042/nst.22.272-276

Abstract:

In_2O_3 nanowires with uniform morphology and single crystalline structure were synthesized at low temperature of 400℃~450℃using InSb as the precursor via VLS mechanism.The nanowires have uniform diameter of about 40 nm and are up to tens of micrometres in length and grew along the[100]direction as established by high resolution electron microscopy.The electronic and local structures of ln203 nanowires,compared to that of In203 powder,have been studied with X-ray absorption fine structure(XAFS) at In K-edge and O K-edge.The XAFS results reveal the stronger In-O bonding in In_2O_3 nanowires compared to bulk In_2O_3.

Key words: In_2O_3 nanowires, Low temperature synthesis, XAFS, Electronic structure