Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2017, Vol. 28 ›› Issue (12): 183 doi: 10.1007/s41365-017-0331-7

• NUCLEAR ENERGY SCIENCE AND ENGINEERING • Previous Articles     Next Articles

Identifying defect energy levels using DLTS under different electron irradiation conditions

Chun-Sheng Guo 1,2,3  Ruo-Min Wang 1 Yu-Wei Zhang 2  Guo-Xi Pei 3 Shi-Wei Feng 1 Zhao-Xian Li 2   

  1. 1 College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
    2 Wuxi EL Pont Group, Wuxi 214151, China
    3 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • Contact: Chun-Sheng Guo
  • Supported by:

    This work was supported by the Beijing education and scientific research department (No. KM201510005008).

PDF ShareIt Export Citation
Chun-Sheng Guo, Ruo-Min Wang, Yu-Wei Zhang, Guo-Xi Pei, Shi-Wei Feng, Zhao-Xian Li. Identifying defect energy levels using DLTS under different electron irradiation conditions.Nuclear Science and Techniques, 2017, 28(12): 183     doi: 10.1007/s41365-017-0331-7


Electron beams of 0.5, 1.5, 2.0, and 5.0 MeV were used to irradiate n-Si diodes to fluences of 5.5 × 1013, 1.7 × 1014, and 3.3 × 1014 e cm−2. The forward voltage drop, minority carrier lifetime, and deep level transient spectroscopy (DLTS) characteristics of silicon p–n junction diodes before and after irradiation were compared. At the fluence of 3.3 × 1014 e cm−2, the forward voltage drop increased from 1.25 V at 0.5 MeV to 7.96 V at 5.0 MeV, while the minority carrier lifetime decreased significantly from 7.09 μs at 0.5 MeV to 0.06 μs at 5. 0 MeV. Six types of changes in the energy levels in DLTS spectra were analyzed and discussed.

Key words: Electron irradiation, Deep level transient spectroscopy (DLTS), Minority carrier life time, Silicon diode