Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2018 Impact factor 0.961

Nuclear Science and Techniques ›› 2008, Vol. 19 ›› Issue (6): 333-336

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Electron-induced damage to NPN transistors under different fluxes

ZHENG Yuzhan1, 2 LU Wu1,* REN Diyuan1 GUO Qi1 YU Xuefeng1 Lü Xiaolong1   

  1. 1Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China 2Graduate School of Chinese Academy of Sciences, Beijing 100049, China
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ZHENG Yuzhan, LU Wu, REN Diyuan, GUO Qi, YU Xuefeng, Lü Xiaolong. Electron-induced damage to NPN transistors under different fluxes.Nuclear Science and Techniques, 2008, 19(6): 333-336

Abstract: Radiation damage of NPN transistors under different fluxes with electron energy of 1.5 MeV was investigated in this article. It has been shown that when NPN transistors were irradiated to a given fluence at different electron fluxes, the shift of base current was dependent on flux. With electron flux decreasing, the shift of base current becomes larger, while collector current almost keeps constant. Thus, more degradation of NPN transistors could be caused by low-electron-flux irradiation, similar to enhanced low-dose-rate sensitivity (ELDRS) of transistors under 60Co ?-irradiation. Finally, the underlying mechanisms were discussed here.

Key words: Electron flux, NPN transistor, Radiation damage