Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2005, Vol. 16 ›› Issue (6): 330

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Overview of SOI materials technology in China

CHEN Meng, WANG Xi, LIN Cheng-Lu   

  1. Shanghai Simgui Technology Co., Ltd, 200 Puhui Road, Jiading, Shanghai 201821; Shanghai Institute of Microsystem and Information Technology, the Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050
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CHEN Meng, WANG Xi, LIN Cheng-Lu. Overview of SOI materials technology in China.Nuclear Science and Techniques, 2005, 16(6): 330

Abstract: In recent years, novel structure SOI materials have been fabricated successfully. Also, SiGeOI (SGOI) material, an ideal substrate for realizing strained-silicon structures, has been investigated by modified SIMOX technology. From 2002, the 100 mm, 125 mm and 150 mm SIMOX wafers have been successfully produced by Shanghai Simgui Technology Co. Ltd, a commercial spin-off of Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), and shipped to the semiconductor industry worldwide. This paper presents an outlook for R & D on SOI technologies, and the recent status and future prospect of SIMOX wafers in China.

Key words: Silicon-on-insulator(SOI), Ion implantation, Separation by implanted oxygen (SIMOX)