Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2005, Vol. 16 ›› Issue (3): 149

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Thin relaxed SiGe layer grown on Ar+ ion implanted Si substrate by ultra-high vacuum chemical vapor deposition

CHEN Chang-Chun1*, YU Ben-Hai1, LIU Jiang-Feng1, CAO Jian-Qing2, ZHU De-Zhang 2   

  1. 1 College of Physics and Electronic Engineering, Xinyang Normal University, Xinyang 464000
    2 Shanghai Institute of Applied Physics, the Chinese Academy of Sciences, Shanghai 201800
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CHEN Chang-Chun, YU Ben-Hai, LIU Jiang-Feng, CAO Jian-Qing, ZHU De-Zhang. Thin relaxed SiGe layer grown on Ar+ ion implanted Si substrate by ultra-high vacuum chemical vapor deposition.Nuclear Science and Techniques, 2005, 16(3): 149

Abstract: Thin strain-relaxed Si0.81Ge0.19 films (95 nm) on the Ar+ ion implanted Si substrates with different energies (30 keV, 40 keV and 60 keV) at the same implanted dose (3×1015cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Rutherford backscattering/ion channeling (RBS/C), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C demonstrate that these thin Si0.81Ge0.19 films were epitaxially grown on the Ar+ ion implanted Si substrates, although there existed lots of crystal defects. The relaxation extent of Si0.81Ge0.19 films on the Ar+ implanted Si substrates is larger than that in the unimplanted case, which were verified by Raman spectra. Considering the relaxation extent of strain, surface roughness and crystal defects in these SiGe films, the thin relaxed SiGe film on the 30 keV Ar+ implanted Si substrate is optimal.

Key words: Strain relaxation, Ultra high vacuum chemical vapor deposition, Ion implantation, SiGe