Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2004, Vol. 15 ›› Issue (6): 321

• NUCLEAR, HEAVY ION AND ATOMIC PHYSICS •     Next Articles

Atomic mobility in energetic cluster deposition

PAN Zheng-Ying, WANG Yue-Xia, WEI Qi, LI Zhi-Jie, ZHOU Liang, ZHANG Liang-Kun   

  1. Institute of Modern Physics, Fudan University, Shanghai 200433
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PAN Zheng-Ying, WANG Yue-Xia, WEI Qi, LI Zhi-Jie, ZHOU Liang, ZHANG Liang-Kun. Atomic mobility in energetic cluster deposition.Nuclear Science and Techniques, 2004, 15(6): 321

Abstract: This paper tries to outline the influence of atomic mobility on the initial fabrication of thin films formed by LECBD. Based on our recent studies on low-energy cluster beam deposition (LECBD) by molecular dynamics simulation, two examples, the deposition of small carbon clusters on Si and diamond surfaces and Al clusters on Ni substrate, were mainly discussed. The impact energy of the cluster ranges from 0.1 eV to 100 eV. In the former case, the mobility and the lateral migration of surface atoms, especially the recoil atoms, are enhanced with increasing the impact energy, which promote the film to be smoother and denser. For the latter case, the transverse kinetic energy of cluster atoms, caused mainly by the collision between moving cluster atoms, dominates the lateral spread of cluster atoms on the surface, which is contributive to layer-by-layer growth of thin films. Our result is consistent with the experimental observations that the film structure is strongly dependent on the impact energy. In addition, it elucidates that the atomic mobility takes a leading role in the structure characteristic of films formed by LECBD.

Key words: Atomic mobility, Energetic cluster, Thin film growth, Molecular dynamics simulation