Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2003, Vol. 14 ›› Issue (2): 119

• LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS • Previous Articles     Next Articles

Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure

ZHU Ming, LIN Qing, LIU Xiang-Hua, LIN Zi-Xin, ZHANG Zheng-Xuan, LIN Cheng-Lu   

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, the Chinese Academy of Sciences, Shanghai 200050
PDF ShareIt Export Citation
ZHU Ming, LIN Qing, LIU Xiang-Hua, LIN Zi-Xin, ZHANG Zheng-Xuan, LIN Cheng-Lu. Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure.Nuclear Science and Techniques, 2003, 14(2): 119

Abstract: An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current levels. In this paper a novel solution to reduce the self-heating effect is proposed, based on N+ and O+ co-implantation into silicon wafer to form a new buried layer structure. This new structure was simulated using Medici program, and the temperature distribution and output characteristics were compared with those of the conventional SOI counterparts. As expected, a reduction of self-heating effect in the novel SOI device was observed.

Key words: SOI, Self-heating effect, Co-implantation, Medici simulation