Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2018 Impact factor 0.961

Nuclear Science and Techniques ›› 2003, Vol. 14 ›› Issue (1): 56

• LOW ENERGY ACCELERATOR, RAY AND APPLICATIONS • Previous Articles     Next Articles

Effect of hydrogen on SiC-C films with AES and XPS analyses

HUANG Ning-Kang, YANG Bin, XIONG Qi, LIU Yao-Guang   

  1. Key Lab. for Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064
  • Supported by:
    Supported by the National Natural Science Foundation of China (5978100)
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HUANG Ning-Kang, YANG Bin, XIONG Qi, LIU Yao-Guang. Effect of hydrogen on SiC-C films with AES and XPS analyses.Nuclear Science and Techniques, 2003, 14(1): 56

Abstract: SiC-C films with different content of SiC were deposited with r. f. magnetron sputtering followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of 3.23×107 Pa for 3h at 500K. AES and XPS were used to analyze chemical bonding states of C and Si in the SiC-C films as well as contaminating oxygen before and after hydrogen gas permeation in order to study the effect of hydrogen on them. Related mechanism was discussed in this paper.

Key words: SiC-C films, Hydrogen permeation, XPS, AES