Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2018 Impact factor 0.961

Nuclear Science and Techniques ›› 2001, Vol. 12 ›› Issue (4): 295

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Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling

CHEN Chang-Chun1, Z1TU De-Zhang1, ZHANG Shi-Li2, LIU Hua-Ming1, CAO Jian-Qin1, ZITANG Zhi-Bin1, PAN Hao-Chang1, WANG Yong-Qi1   

  1. 1 Laboratory of Nuclear Analyses and Techniques. Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences, Shanghai 201800;
    2 Kungliga Tekniska Hégskolan, Department of Electronics, Electrum 229, SB-16440 Kista Sweden
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CHEN Chang-Chun, ZTU De-Zhang, ZHANG Shi-Li, LIU Hua-Ming, CAO Jian-Qin, ZITANG Zhi-Bin, PAN Hao-Chang, WANG Yong-Qi. Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling.Nuclear Science and Techniques, 2001, 12(4): 295

Abstract: The influence of the high temperature processing om the strain stored in SiGe hetero epilayer was studied by means of RBS/Channcling. Channeling angular scan along the axial direction in the (100) plane was used to characterize the tetragonal distortion in the SiGe strained layer. The strained crystal structure parameters were acquired by combining the determination of strain with the elasticity theory. Ut is shown that the strain stored in the SiGe epilayer bas significantly change {relaxation factor from 0.023 to 0.84) after high temperature annealing. ‘The potential strain relaxation mechanisms were discussed.

Key words: Strain. SiGe epilayer, RBS/Channeling, High temperature anueals