Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2001, Vol. 12 ›› Issue (1): 16

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Long range implantation by MEVVA metal ion source

ZHANG ‘ong-He, WU Yu-Guang, MA Fu-Rong, LIANG Hong   

  1. Key Laboratory in University for Radiation Beam Technology and Material modification, Institute of Low Energy Nuclear Physics, Beijing Normal University; Beijing Radiation Center, Beijing 100875
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ZHANG ‘ong-He, WU Yu-Guang, MA Fu-Rong, LIANG Hong. Long range implantation by MEVVA metal ion source.Nuclear Science and Techniques, 2001, 12(1): 16

Abstract: Metal vapor vacuum arc (MEVVA] source ion implantation is a new technology used for achieving long range ion impantation. It is very important for research and application of the ion beam modification of materials. The results show that the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux and high dose. ‘The implanted depth is 3~11.6 times greater than that of the corresponding ion range. The ion species, doses and ion fluxes play an important part in the long-range implantation. Especially, thermal atom chemistry have specific: effect on the long-range implantation during high ion flux implantation at transien! high target temperature.

Key words: MEVVA ion source, Long-range ion implantation, Diffusion coefficient, High ionflux