Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 1997, Vol. 8 ›› Issue (1): 30

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Positron annihilation study of defects in GaAs irradiated by fission neutron

Zhu Sheng-Yun1, Li An-Li1, Luo Qi1, Fan Zhi-Guo1, Zheng Sheng-Nan1, Gou Zhen-Hui1, Qian Jia-Yu2   

  1. 1 China Institute of Atomic Energy, Beijing 102413;
    2 Beijing General Research Institute for Non-ferrous Metals, Beijing 100088
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Zhu Sheng-Yun, Li An-Li, Luo Qi, Fan Zhi-Guo, Zheng Sheng-Nan, Gou Zhen-Hui, Qian Jia-Yu. Positron annihilation study of defects in GaAs irradiated by fission neutron.Nuclear Science and Techniques, 1997, 8(1): 30

Abstract: The defects in Si-doped, N-type HB GaAs single crystal irradiated by En >1MeV fission neutrons (6.5 x1016cm-2 and 1.4x1014cm-2) have been investigated using positron annihilation lifetime technique. The mono- and di-vacancies were created by irradiation and the tri-vacancies were formed during annealing. The concentration of defects is proportional to the irradiating neutron fluence. Three annealing stages were observed at 250, 450 and 650℃ for the mono-,.div and. trivacancies.. respectively.

Key words: GaAs, En >1MeV fission neutron irradiation, Defects and defect annealing, Positron annihilation