Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 1996, Vol. 7 ›› Issue (3): 183

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Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs

Ren Di-Yuan(任迪远), Yu Xue-Feng(余学锋), Lu Wu(陆妩), Gao Wen-Yu(高文玉), Zhang Guo-Qiang(张国强) and Yan Rong-Liang(严荣良)   

  1. Xinjiang Institute of Physics, the Chinese Academy of Sciences, Urumqi 830011
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Ren Di-Yuan(任迪远), Yu Xue-Feng(余学锋), Lu Wu(陆妩), Gao Wen-Yu(高文玉), Zhang Guo-Qiang(张国强) and Yan Rong-Liang(严荣良). Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs.Nuclear Science and Techniques, 1996, 7(3): 183

Abstract: The model separating the effects of radiation-induced oxide-trapped charge and interface state charge on mobility can be better manifested the mechanisms of the radiationinduced mobility degradation in NMOSFET and PMOSFET. The comparison between the model and the experiment shows that the Coulomb scattcring role of interface defects to hole is larger than to electrons.

Key words: MOSFET, Mathematical models, Mobility, Physical radiation effect