Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 1994, Vol. 5 ›› Issue (3): 154

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ION BEAM AND SIMS ANALYSIS ON DAMAGE OF GaAs DOPED WITH N+

Wu Xiaoshan(吴小山)1, Lin Zhenjin(林振金)1, Chengzhou(姬成周)2, Yang Xizhen(杨锡震)1   

  1. 1 Department of Physics, Beying Normal University;
    2 Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875, China
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Wu Xiaoshan(吴小山), Lin Zhenjin(林振金), Chengzhou(姬成周), Yang Xizhen(杨锡震). ION BEAM AND SIMS ANALYSIS ON DAMAGE OF GaAs DOPED WITH N+.Nuclear Science and Techniques, 1994, 5(3): 154

Abstract: The Rutherford backscattering (RBS) spectra of N+-implanted GaAs are measured with a Het ion beam of 2.1MeV. The backscattering yield along < 100 > aligned incidence increases with the increase in implanted doses. The depth profiles of nitrogen and arsenic are measured by secondary ion mass spectrometer (SIMS). The diffusion of nitrogen in the implanted layers is explained as interstitial migration. The damage is very severe during the ion implantation, and it can be recovered partly by annealing. The two-step annealing improves the effect obviously. The calculation on distribution of damage shows that the recovery is proceeded from the inner side to the surface during the annealing. The mechanism of damage is discussed briefly.

Key words: Jon implantation, Damage, RBS channeling, SIMS, Depth profile