Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 1994, Vol. 5 ›› Issue (2): 124

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RADIATION EFFECT ON FLUORINATED SiO2 FILMS

Zhang Guoqiang (张国强)1, Yan Rongliang (严荣良)1, Yu Xuefeng (余学锋)1, Gao Wenyu (高文钰)1, Ren Diyuan (任迪远)1, Zhao Yuanfu (赵元富)2, Hu Yuhong (胡浴红)2, Wang Yingmin(王英民)2   

  1. 1 Xinjiang Institute of Physics, the Chinese Academia of Sciences, Urumqi 830011, China;
    2 Lishan Microelectronics Corporation, Xi'an 710600, China
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Zhang Guoqiang (张国强), Yan Rongliang (严荣良), Yu Xuefeng (余学锋), Gao Wenyu (高文钰), Ren Diyuan (任迪远), Zhao Yuanfu (赵元富), Hu Yuhong (胡浴红), Wang Yingmin(王英民). RADIATION EFFECT ON FLUORINATED SiO2 FILMS.Nuclear Science and Techniques, 1994, 5(2): 124

Abstract: A systematic investigation of γ radiation effects in gate SiO2 as a function of the fluorine ion implantation conditions was performed. It has been found that the generation of interface states and oxide trapped charges in fluorinated MOSFETs depends strongly on implantation conditions. The action of F in oxides is the conjunction of positive and negative effects. A model by forming Si-F bonds to substitute the other strained bonds which easily become charge traps under irradiation and to relax the bond stress on Si / SiO2 interface is used for experimental explanation.

Key words: Threshold voltage, Oxide trapped charge, Interface state, Radiation