Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 1990, Vol. 1 ›› Issue (3): 156

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THE DAMAGE MEASUREMENT OF ION— IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE— CHANNELING TECHNIQUE

Liu Huizhen (刘惠珍 ),Sheng Kanglong (盛康龙),Zhu Dezhang (朱德彰), Yang Guohua (杨国华),Zhu Fuying (朱福英),Cao Jianqing (曹建清) and Tang Lijun(唐立军   

  1. Shanghai Institute of Nuclear Research, Academia Sinica, Shanghai 201800, China
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Liu Huizhen (刘惠珍 ), Sheng Kanglong (盛康龙), Zhu Dezhang (朱德彰), Yang Guohua (杨国华), Zhu Fuying (朱福英), Cao Jianqing (曹建清) and Tang Lijun(唐立军. THE DAMAGE MEASUREMENT OF ION— IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE— CHANNELING TECHNIQUE.Nuclear Science and Techniques, 1990, 1(3): 156

Abstract: A combined PIXE- RBS channeling measurement system to examine IN- V compound semiconductors has been established. Preliminary results on studying Si+ and Te+ implanted GaAs have been presented and discussed.

Key words: Ion implantation, Compound semiconductor, GaAs, Pit — channeling icclinings