Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2015, Vol. 26 ›› Issue (5): 050405 doi: 10.13538/j.1001-8042/nst.26.050405


A novel single event upset reversal in 40-nm bulk CMOS 6T SRAM cells

LI Peng, ZHANG Min-Xuan, ZHAO Zhen-Yu, DENG Quan   

  1. College of Computer, National University of Defense Technology, Changsha 410073, China
  • Contact: LI Peng
  • Supported by:

    Supported by National Natural Science Foundation of China (Nos. 61176030 and 61373032) and Specialized Research Fund for the Doctor Program of Higher Education of China (No. 20124307110016)

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LI Peng, ZHANG Min-Xuan, ZHAO Zhen-Yu, DENG Quan. A novel single event upset reversal in 40-nm bulk CMOS 6T SRAM cells.Nuclear Science and Techniques, 2015, 26(5): 050405     doi: 10.13538/j.1001-8042/nst.26.050405


In advanced technologies, single event upset reversal (SEUR) due to charge sharing can make the upset state of SRAM cells recover to their initial state, which can reduce the soft error for SRAMs in radiation environments. By using the full 3D TCAD simulations, this paper presents a new kind of SEUR triggered by the charge collection of the Off-PMOS and the delayed charge collection of the On-NMOS in commercial 40- nm 6 T SRAM cells. The simulation results show that the proposed SEUR can not occur at normal incidence, but can present easily at angular incidence. It is also found that the width of SET induced by this SEUR remains the same after linear energy transfer (LET) increases to a certain value. In addition, through analyzing the effect of the spacing, the adjacent transistors, the drain area, and some other dependent parameters on this new kind of SEUR, some methods are proposed to strengthen the recovery ability of SRAM cells.

Key words: Radiation environment, 6 T SRAM cell, Charge collection, Charge sharing, Single event upset reversal (SEUR), Single event transient (SET)