Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2012, Vol. 23 ›› Issue (2): 65-69 doi: 10.13538/j.1001-8042/nst.23.65-69

• SYNCHROTRON TECHNOLOGY AND APPLICATIONS •     Next Articles

EXAFS and SR-XRD study on Cu occupation sites in Zn1-xCuxO diluted magnetic semiconductors

YANG Chen1,2 ZHANG Bin1,2,* WANG Jianzhong1,2 SHI Liqun1,2 CHENG Huansheng1,2 YANG Tieying3 WEN Wen3 HU Fengchun4   

  1. 1Applied Ion Beam Physics Laboratory (Key Laboratory of the Ministry of Education), Institute of Modern Physics, Fudan University, Shanghai 200433, China 2Department of Nuclear Science and Technology, Fudan University, Shanghai 200433, China 3Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China 4National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
YANG Chen, ZHANG Bin, WANG Jianzhong, SHI Liqun, CHENG Huansheng, YANG Tieying, WEN Wen, HU Fengchun. EXAFS and SR-XRD study on Cu occupation sites in Zn1-xCuxO diluted magnetic semiconductors.Nuclear Science and Techniques, 2012, 23(2): 65-69     doi: 10.13538/j.1001-8042/nst.23.65-69

Abstract:

ZnO films, doped with 2.9 atom% Cu, were prepared by radio frequency magnetron sputtering on sapphire substrate at different substrate temperatures. No magnetic impurities such as Fe, Co and Ni were found in the PIXE spectra. The ZnO:Cu films possessed the wurtzite ZnO structure. No precipitates such as CuO and Cu2O or Cu cluster, were observed by synchrotron radiation X-ray diffraction in the ZnO:Cu films. Extended X-ray absorption fine structure (EXAFS) analysis showed that Cu atoms were incorporated into ZnO crystal lattice by occupying the sites of Zn atoms.

Key words: EXAFS, SR-XRD, PIXE, Cu occupations, ZnO DMS