Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2011, Vol. 22 ›› Issue (5): 265-271 doi: 10.13538/j.1001-8042/nst.22.265-271

• LOW ENERGY ACCELERATOR AND RADIATION APPLICATIONS • Previous Articles     Next Articles

Simulation of monolithic active pixel sensor with high resistivity epitaxial layer

FU Min TANG Zhenan~*   

  1. School of Electronic Science and Technology,Dalian University of Technology,Dalian 116024,China
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FU Min, TANG Zhenan . Simulation of monolithic active pixel sensor with high resistivity epitaxial layer.Nuclear Science and Techniques, 2011, 22(5): 265-271     doi: 10.13538/j.1001-8042/nst.22.265-271

Abstract:

The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity epitaxial layers(epi-layers) are built and simulated using Synopsys-Sentaurus.The basic characteristics of detectors are evaluated,including electric potential,electric field,and depleted region.Results indicate that the high resistivity (HR) epi-layer is a better choice.Further,simulation results show that the key collection performance is significantly improved owing to a wider and stronger electric field in the N type HR epi-layer.

Key words: Monolithic active pixel sensor, Charge collection, High resistivity, Simulation