Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2010, Vol. 21 ›› Issue (6): 352-356 doi: 10.13538/j.1001-8042/nst.21.352-356

• LOW ENERGY ACCELERATOR AND RADIATION APPLICATIONS • Previous Articles     Next Articles

Dose-rate effects of low-dropout voltage regulator at various biases

WANG Yiyuan~(1,2,3) LU Wu~(1,2,*) REN Diyuan~(1,2) ZHENG Yuzhan~(1,2,3) GAO Bo~(1,2,3) CHEN Rui~(1,2,3) FEI Wuxiong~(1,2,3)   

  1. 1 Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011,China 2 Xinjiang Key Laboratory of Electronic Information Materials and Devices,Urumqi 830011,China 3 Graduate University of Chinese Academy of Sciences,Beijing 100049,China
WANG Yiyuan, LU Wu, REN Diyuan, ZHENG Yuzhan, GAO Bo, CHEN Rui, FEI Wuxiong. Dose-rate effects of low-dropout voltage regulator at various biases.Nuclear Science and Techniques, 2010, 21(6): 352-356     doi: 10.13538/j.1001-8042/nst.21.352-356

Abstract:

A low-dropout voltage regulator,LM2941,was irradiated by ~(60)Coγ-rays at various dose rates and biases for investigating the total dose and dose rate effects.The radiation responses show that the key electrical parameters, including its output and dropout voltage,and the maximum output current,are sensitive to total dose and dose rates, and are significantly degraded at low dose rate and zero bias.The integrated circuits damage change with the dose rates and biases,and the dose-rate effects are relative to its electric field.

Key words: Dose rate effects, ELDRS, Ionizing radiation, LDO voltage regulator