Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2010, Vol. 21 ›› Issue (5): 312-315 doi: 10.13538/j.1001-8042/nst.21.312-315

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Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector

WEMBE TAFO Evariste1, 2 SU Hong1,* QIAN Yi1 KONG Jie1 WANG Tongxi1   

  1. 1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China 2 Department of Physics, University of Douala, Cameroon
WEMBE TAFO Evariste, SU Hong, QIAN Yi, KONG Jie, WANG Tongxi. Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector.Nuclear Science and Techniques, 2010, 21(5): 312-315     doi: 10.13538/j.1001-8042/nst.21.312-315

Abstract:

The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip, Si(Li), CdZnTe and CsI detectors, etc., which can be further integrated the whole system and adopted to develop CMOS - based application, specific integrated circuit for Front End Electronics(FEE) of read-out system of nuclear physics, particle physics and astrophysics research, etc. It’s why we used only CMOS transistor to develop the entire system. A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC4 filter, we perform shaping time in the range, 465 ns to 2.76 ? s with a low output resistance and the linearity almost good.

Key words: Shaping Amplifier, CMOS transistor, Gaussian, CR-RCn filter, Simulation