Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2013, Vol. 24 ›› Issue (6): 060202 doi: 10.13538/j.1001-8042/nst.2013.06.019

• LOW ENERGY ACCELERATOR, RAY AND APPLICATIONS • Previous Articles     Next Articles

Influence of channel length and layout on TID for 0.18 μm NMOS transistors

WU Xue1,2,3 LU Wu1,2,*  WANG Xin1,2,3 GUO Qi1,2 HE Chengfa1,2#br# LI Yudong1,2 XI Shanbin1,2,3 SUN Jing1,2 WEN Lin1,2   

  1. 1Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese
    Academy of Sciences, Urumqi 830011, China
    2Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
    3Graduate University of Chinese Academy of Sciences, Beijing 100049, China
  • Contact: LU Wu
  • Supported by:

    Supported by National Laboratory Analog Integrated Circuit Foundation(No. 9140C090402110C0906)

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WU Xue, LU Wu, WANG Xin, GUO Qi, HE Chengfa. Influence of channel length and layout on TID for 0.18 μm NMOS transistors.Nuclear Science and Techniques, 2013, 24(6): 060202     doi: 10.13538/j.1001-8042/nst.2013.06.019


Different channel lengths and layouts on 0.18 μm NMOS transistors are designed for investigating the dependence of short channel effects (SCEs) on the width of shallow trench isolation (STI) devices and designing in radiation hardness. Results show that, prior to irradiation, the devices exhibited near–ideal I–V characteristics, with no significant SCEs. Following irradiation, no noticeable shift of threshold voltage is observed, radiation–induced edge–leakage current, however, exhibits significant sensitivity on TID. Moreover, radiation–enhanced drain induced barrier lowering (DIBL) and channel length modulation (CLM) effects are observed on short–channel NMOS transistors. Comparing to stripe–gate layout, enclosed–gate layout has excellent radiation tolerance.

Key words: SCEs, DIBL, CLM, Enclosed–layout