Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2020, Vol. 31 ›› Issue (2): 18 doi: 10.1007/s41365-020-0723-y

• NUCLEAR ENERGY SCIENCE AND ENGINEERING • Previous Articles     Next Articles

Comparison of time-related electrical properties of PN junctions and Schottky diodes for ZnO-based betavoltaic batteries

Xiao-Yi Li1 • Jing-Bin Lu1 • Ren-Zhou Zheng1 • Yu Wang1 • Xu Xu1 • Yu-Min Liu2 • Rui He1   

  1. 1 College of Physics, Jilin University, Changchun 130012, China
    2 East China University of Technology, Nanchang 330013, China
  • Received:2019-10-10 Revised:2019-12-04 Accepted:2019-12-16
  • Contact: Jing-Bin Lu E-mail:ljb@jlu.edu.cn
  • Supported by:
    This work was supported by the National Major Scientific Instruments and Equipment Development Projects (No. 2012YQ240121) and National Natural Science Foundation of China (No. 11075064).
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Xiao-Yi Li, Jing-Bin Lu, Ren-Zhou Zheng, Yu Wang, Xu Xu, Yu-Min Liu, Rui He. Comparison of time-related electrical properties of PN junctions and Schottky diodes for ZnO-based betavoltaic batteries.Nuclear Science and Techniques, 2020, 31(2): 18     doi: 10.1007/s41365-020-0723-y
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Abstract: Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries, in which 0.101121 Ci 63Ni was selected as the beta source. The time-related electrical properties were obtained using Monte Carlo simulations. For the n-type ZnO, the Pt/ZnO Schottky diode had the highest energy conversion efficiency, and the Ni/ZnO Schottky diode had the largest Isc. The overall electrical performance of PN junctions is better than that of Schottky diodes. The lifetimes of Pt/ZnO and Ni/ZnO are longer than for other Schottky devices, coming close to those of PN junctions. Considering that Schottky diodes are easier to fabricate and independent of p-type semiconductors, Pt/ZnO and Ni/ZnO diodes offer alternatives to PN-junction-based betavoltaic batteries.

Key words: Beta voltaic effect, Zinc oxide, Time-related properties, PN junction, Schottky diode, Monte Carlo simulation