Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2019, Vol. 30 ›› Issue (9): 143 doi: 10.1007/s41365-019-0664-5

• NUCLEAR ENERGY SCIENCE AND ENGINEERING • Previous Articles     Next Articles

Ionizing and non-ionizing kerma factors in silicon for China Spallation Neutron Source neutron spectrum

Xiao-Ming Jin, Yan Liu, Chun-Lei Su, Wei Chen,Chen-hui Wang, Shan-Chao Yang, Xiao-Qiang Guo   

  1. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
  • Received:2019-01-30 Revised:2019-04-02 Accepted:2019-05-05
  • Contact: Xiao-Ming Jin E-mail:jinxiaoming@nint.ac.cn
  • Supported by:
    This work was supported by the National Natural Science Foundation of China (Nos. 11690040 and 11690043) and the Foundation of State Key Laboratory of China (Nos. SKLIPR1801Z and 6142802180304).
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Xiao-Ming Jin, Yan Liu, Chun-Lei Su, Wei Chen, Chen-hui Wang, Shan-Chao Yang, Xiao-Qiang Guo. Ionizing and non-ionizing kerma factors in silicon for China Spallation Neutron Source neutron spectrum.Nuclear Science and Techniques, 2019, 30(9): 143     doi: 10.1007/s41365-019-0664-5

Abstract: The quantification of ionizing energy deposition and non-ionizing energy deposition plays a critical role in precision neutron dosimetry and in the separation of the displacement damage effects and ionizing effects induced by neutron radiation on semiconductor devices. In this report, neutrons generated by the newly built China Spallation Neutron Source (CSNS) are simulated by Geant4 in semiconductor material silicon to calculate the ionizing and non-ionizing kerma factors. Furthermore, the integral method is applied to calculate neutron-induced ionizing at the CSNS and non-ionizing kerma factors according to the standard neutron nuclear database and the incident neutron spectrum. In addition, thermoluminescence dosimeters are utilized to measure the ionizing energy deposition and six series of bipolar junction transistors are used to measure the non-ionizing energy deposition based on their neutron damage constants. The calibrated kerma factors that were experimentally measured agreed well with the simulation and integral calculation results. This report describes a complete set of methods and fundamental data for the analysis of neutron-induced radiation effects at the CSNS on silicon-based semiconductor devices.

Key words: Neutron radiation, Kerma, Ionizing energy, Non-ionizing energy, CSNS