Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2019, Vol. 30 ›› Issue (8): 119 doi: 10.1007/s41365-019-0644-9

• NUCLEAR CHEMISTRY,RADIOCHEMISTRY,RADIOPHARMACEUTICALS AND NUCLEAR MEDICINE • Previous Articles     Next Articles

EQR SiPM with P-on-N diode configuration

Jian-Quan Jia, Jia-Li Jiang, Kun Liang, Ru Yang, De-Jun Han   

  1. Novel Device Laboratory, Beijing Normal University, Beijing 100875 China
  • Received:2017-07-19 Revised:2019-01-28 Accepted:2019-05-09
  • Contact: Kun Liang E-mail:lk@bnu.edu.cn
  • Supported by:
    This work was supported by the National Natural Science Foundation of China (Nos. 61534005, 11475025 and 11375029).
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Jian-Quan Jia, Jia-Li Jiang, Kun Liang, Ru Yang, De-Jun Han. EQR SiPM with P-on-N diode configuration.Nuclear Science and Techniques, 2019, 30(8): 119     doi: 10.1007/s41365-019-0644-9
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Abstract: The silicon photomultiplier (SiPM) with epitaxial quenching resistor (EQR) is an emerging and developing technology that has recently attracted the interest from the research community. It has characteristics of a continuous low-resistance cap layer and integrated quenching resisters in epitaxial silicon layer, which makes it possible to increase microcell density or reduce microcell size, thus obtaining large dynamic range and high photon detection efficiency (PDE) simultaneously. Results published show that the EQR SiPM with N-on-P diode configuration had relatively low PDE at peak wavelength of 480 nm as 16%. This paper reported the EQR SiPM with P-on-N diode configuration having active area of 3 x 3 mm2 and cell density of 10,000/mm2 (total 90,000 pixels). It was characterized with gain of 2E5, dark count rate of 7 MHz, crosstalk of 7%, dynamic range of 85,000 pixels, overall recovery time of 32 ns at room temperature and over-voltage of 3.5 V. The improved PDE at peak wavelength of 420 nm was 30%.

Key words: Silicon photomultiplier, Epitaxial quenching, P-on-N diode, Characteristics