Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices

doi:10.1007/s41365-019-0570-x

Nuclear Science and Techniques ›› 2019, Vol. 30 ›› Issue (3): 47 doi: 10.1007/s41365-019-0570-x

• NUCLEAR ELECTRONICS AND INSTRUMENTATION • Previous Articles Next Articles

Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices

Zhan-Gang Zhang¹ • Yun Huang¹ • Yun-Fei En¹ • Zhi-Feng Lei¹

¹ Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China

Received:2018-02-10 Revised:2018-08-19 Accepted:2018-08-21
Contact: Zhan-Gang Zhang E-mail:zhangangzhang@163.com
Supported by:
This work was supported by the National Natural Science Foundation of China (No. 11505033), the Science and Technology Research Project of Guangdong, China (Nos. 2015B090901048 and 2017B090901068), and the Science and Technology Plan Project of Guangzhou, China (No. 201707010186).

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Zhan-Gang Zhang, Yun Huang, Yun-Fei En, Zhi-Feng Lei. Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices.Nuclear Science and Techniques, 2019, 30(3): 47 doi: 10.1007/s41365-019-0570-x

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Abstract

Abstract: Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects, which can range from 180 to 500 MeV. This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. Highenergy deposition events (>10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers.

Key words: Proton, Single-event effect, Threshold LET, Monte Carlo simulation

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Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices

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