# Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2018, Vol. 29 ›› Issue (10): 139

### Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode

Gui-Peng Liu 1 • Xin Wang 1 • Meng-Nan Li 2 • Zheng-Peng Pang 1 • Yong-Hui Tian 1 • Jian-Hong Yang 1

1. 1 Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
2 China Academy of Electronic and Information Technology, Beijing 100041, China
• Contact: Gui-Peng Liu E-mail:liugp@lzu.edu.cn
• Supported by:

This work was supported by the National Natural Science Foundation of China (No. 61404132) and the Fundamental Research Funds for the Central Universities (Nos. lzujbky-2015-302, lzujbky-2017-171, and lzujbky-2016-119).

PDF ShareIt Export Citation
Gui-Peng Liu, Xin Wang, Meng-Nan Li, Zheng-Peng Pang, Yong-Hui Tian, Jian-Hong Yang. Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode.Nuclear Science and Techniques, 2018, 29(10): 139
Citations
Altmetrics

Abstract:

The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes (APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. By considering the diffusion, generation– recombination, local hopping conductivity, band-to-band tunneling, and trap-assisted tunneling currents, we found that the dark current increases as the proton fluence increases, but decreases with increasing proton energy.