Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2018, Vol. 29 ›› Issue (7): 104 doi: 10.1007/s41365-018-0431-z

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Gamma irradiation-induced effects on the properties of TiO2 on fluorine-doped tin oxide prepared by atomic layer deposition

Syed Mansoor Ali1  • M. S. Algarawi 1 • Turki S. ALKhuraiji 2 • S. S. Alghamdi 1 • Muhammad Hammad Aziz 3 • M. Isa 4   

  1. 1 Department of Physics and Astronomy, College of Science, King Saud University, P.O. BOX 2455, Riyadh 11451, Saudi Arabia
    2 National Center for Irradiation Technology, King Abdulaziz City for Science and Technology, Riyadh, Saudi Arabia
    3 Department of Physics, COMSATS Institute of Information and Technology, Lahore, Pakistan
    4 Department of Physics, Faculty of Science, University of Gujrat, Hafiz Hayat Campus, Gujrat, Pakistan
  • Contact: Syed Mansoor Ali E-mail:mansoor_phys@yahoo.com
  • Supported by:

    This work was supported by King Saud University, Deanship of Scientific Research, and College of Science Research Center.

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Syed Mansoor Ali, M. S. Algarawi, Turki S. ALKhuraiji, S. S. Alghamdi, Muhammad Hammad Aziz, M. Isa. Gamma irradiation-induced effects on the properties of TiO2 on fluorine-doped tin oxide prepared by atomic layer deposition.Nuclear Science and Techniques, 2018, 29(7): 104     doi: 10.1007/s41365-018-0431-z

Abstract:

The effect of gamma irradiation with different doses (25–75 kGy) on TiO2 thin films deposited by atomic layer deposition has been studied and characterized by X-ray diffraction (XRD), photoluminescence measurements, ultraviolet–visible (UV–Vis) spectroscopy, and impedance measurements. The XRD results for the TiO2 films indicate an enhancement of crystallization after irradiation, which can be clearly observed from the increase in the peak intensities upon increasing the gamma irradiation doses. The UV–Vis spectra demonstrate a decrease in transmittance, and the band gap of the TiO2 thin films decreases with an increase in the gamma irradiation doses. The Nyquist plots reveal that the overall charge-transfer resistance increases upon increasing the gamma irradiation doses. The equivalent circuit, series resistance, contact resistance, and interface capacitance are measured by simulation using Z-view software. The present work demonstrates that gamma irradiation-induced defects play a major role in the modification of the structural, electrical, and optical properties of the TiO2 thin films.

Key words: ALD, Gamma irradiation, Impedance spectroscopy, Optical band gap, Photoluminescence