Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2018, Vol. 29 ›› Issue (4): 49 doi: 10.1007/s41365-018-0391-3

• NUCLEAR ELECTRONICS AND INSTRUMENTATION • Previous Articles     Next Articles

Analysis of single-event transient sensitivity in fully-depleted silicon-on-insulator MOSFETs

Jing-Yan Xu Shu-Ming Chen 1,2  Rui-Qiang Song 1  Zhen-Yu Wu Jian-Jun Chen 1   

  1. 1 College of Computer, National University of Defense Technology, Changsha 410073, China
    2 National Laboratory for Parallel and Distributed Processing, National University of Defense Technology, Changsha 410073, China
  • Contact: Jing-Yan Xu E-mail:jingyanxu@126.com
  • Supported by:

    This work was supported by the National Natural Science Foundation of China (Nos. 61434007 and 61376109).

PDF ShareIt Export Citation
Jing-Yan Xu, Shu-Ming Chen, Rui-Qiang Song, Zhen-Yu Wu, Jian-Jun Chen. Analysis of single-event transient sensitivity in fully-depleted silicon-on-insulator MOSFETs.Nuclear Science and Techniques, 2018, 29(4): 49     doi: 10.1007/s41365-018-0391-3

Abstract:

Based on 3D-TCAD simulations, single-event transient (SET) effects and charge collection mechanisms in fully depleted silicon-on-insulator (FDSOI) transistors are investigated. This work presents a comparison between 28-nm technology and 0.2-lm technology to analyze the impact of strike location on SET sensitivity in FDSOI devices. Simulation results show that the most SET-sensitive region in FDSOI transistors is the drain region near the gate. An in-depth analysis shows that the bipolar amplification effect in FDSOI devices is dependent on the strike locations. In addition, when the drain contact is moved toward the drain direction, the most sensitive region drifts toward the drain and collects more charge. This provides theoretical guidance for SET hardening.

Key words: Single-event transient, Charge collection, Bipolar amplification, Fully depleted silicon-on-insulator