Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2018, Vol. 29 ›› Issue (4): 57 doi: 10.1007/s41365-018-0386-0

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Cross-sectional investigation of radiation damage of 2 MeV proton irradiated silicon carbide

Xu Wang 1 • Yan-Wen Zhang 2 • Dong Han 3 • Yun-Biao Zhao 3 • Zi-Qiang Zhao 3 • Ming Zhang 1   

  1. 1 Institute of Materials, China Academy of Engineering Physics, Jiangyou 621908, China
    2 Department of Nuclear Physics, China Institute of Atomic Energy, Beijing 102413, China
    3 State Key Laboratory of Nuclear Physics and Technology, Institute of Heavy Ion Physics, School of Physics, Peking University, Beijing 100871, China
  • Contact: Xu Wang E-mail:xuwang89@caep.cn
  • Supported by:

    This work was supported by the National Natural Science Foundation of China (Grant Nos. 11705169, 91426304 and 91226202).

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Xu Wang, Yan-Wen Zhang, Dong Han, Yun-Biao Zhao, Zi-Qiang Zhao, Ming Zhang. Cross-sectional investigation of radiation damage of 2 MeV proton irradiated silicon carbide.Nuclear Science and Techniques, 2018, 29(4): 57     doi: 10.1007/s41365-018-0386-0
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Abstract:

Cross-sectional investigation is an important method to study ion irradiation effects in the depth direction. In this study, 2 MeV H+ was implanted in 6H-SiC single crystals to investigate the effects of light ion irradiation on SiC. Raman spectroscopy and scanning electronic microscopy (SEM) were carried out on crosssectional samples to reveal the in-depth damage states and dopant behavior. The most damaged region is a little shallower than that predicted by the SRIM procedure, owing to the uncertainty in SRIM simulations. Layered structures representing zones of varying damage after 2 MeV H ion irradiation are clearly observed. Two bands are observed in SEM images, of which on band corresponds to the damage peak, while the other band at the end of the H ion-affected area is probably a result of H diffusion propelled by a hydrogen-rich layer during irradiation. A charge accumulation effect related with conductivity on the sample surfaces during SEM tests is observed in the H-implanted area. A model is proposed to explain these phenomena.

Key words: SiC, Proton irradiation, Cross-sectional analysis, Raman spectroscopy, SEM