Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2017, Vol. 28 ›› Issue (10): 151 doi: 10.1007/s41365-017-0295-7


Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates

Qian-Qiong Wang 1 ,  Hong-Xia Liu 1 , Shu-Long Wang 1 , Chen-Xi Fei , Dong-Dong Zhao 1 , Shu-Peng Chen 1 , Wei Chen 1   

  1. 1 Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
  • Contact: Hong-Xia Liu
  • Supported by:

    This work was supported by the National Natural Science Foundation of China (No. 61376099), the Foundation for Fundamental Research of China (No. JSZL2016110B003) and the Major Fundamental Research Program of Shaanxi (No.2017ZDJC-26).

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Qian-Qiong Wang, Hong-Xia Liu, Shu-Long Wang, Chen-Xi Fei, Dong-Dong Zhao, Shu-Peng Chen, Wei Chen. Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates.Nuclear Science and Techniques, 2017, 28(10): 151     doi: 10.1007/s41365-017-0295-7


The total dose effect of 60Co c-rays on 0.8-lm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that at low dose rate, due to increase in interface-state density with decreasing dose rate; the scattering effect of interface state on electrons in the channel causes degradation in carrier mobility; and the body current and transconductance of the back gate enhance low-doserate sensitivity when the irradiation is under OFF-bias. A double transconductance peak is observed at 3 kGy(Si) under high dose rates.

Key words: PDSOI device, Total dose irradiation, Interface states, Mobility