Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2017, Vol. 28 ›› Issue (10): 141 doi: 10.1007/s41365-017-0291-y

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Formulae for secondary electron yield from insulators and semiconductors

Ai-Gen Xie 1  Min Lai 1  Yu-Lin Chen 1 Yu-Qing Xia 1   

  1. 1 School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
  • Contact: Ai-Gen Xie E-mail:xagth@126.com
  • Supported by:

    This work was supported by the National Natural Science Foundation of China (No. 11473049).

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Ai-Gen Xie, Min Lai, Yu-Lin Chen, Yu-Qing Xia. Formulae for secondary electron yield from insulators and semiconductors.Nuclear Science and Techniques, 2017, 28(10): 141     doi: 10.1007/s41365-017-0291-y
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Abstract:

The processes and characteristics of secondary electron emission in insulators and semiconductors were studied, and the formulae for the maximum yield (δm) at Wp0m ≤ 800 eV and the secondary electron yield from insulators and semiconductors δ at the primary incident energy of 2 keV ≤ Wp0 < 10 keV (δ2–10) and 10 keV ≤ Wp0 ≤ 100 keV (δ10–100) were deduced. The calculation results were compared with their corresponding experimental data. It is concluded that the deduced formulae can be used to calculate δ2–100 at Wp0m ≤ 800 eV.

Key words: Maximum secondary electron yield, Insulators and semiconductors, Secondary electron yield