Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2017, Vol. 28 ›› Issue (3): 31 doi: 10.1007/s41365-017-0189-8

• NUCLEAR ELECTRONICS AND INSTRUMENTATION • Previous Articles     Next Articles

Effects of electron radiation on commercial power MOSFET with buck converter application

Sheik Fareed Ookar Abubakkar Nor Farahidah Zabah 1  Yusof Abdullah 2  Dhiyauddin Ahmad Fauzi Norasmahan Muridan 1  Nurul Fadzlin Hasbullah 1   

  1. 1 Department of Electrical and Computer Engineering, International Islamic University, Kuala Lumpur 53100, Malaysia
    2 Industrial Technology Division, Agency Nuclear Malaysia, Kuala Lumpur 43000, Malaysia
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S.F.O. Abubakkar · N.F. Zabah · Y. Abdullah · D.A. Fauzi · N. Muridan · N.F. Hasbullah. Effects of electron radiation on commercial power MOSFET with buck converter application.Nuclear Science and Techniques, 2017, 28(3): 31     doi: 10.1007/s41365-017-0189-8

Abstract:

Microelectronic power converters such as buck and boost converter are required to be tolerant to radiations including electron radiation. This paper examines electron
radiation effects on the I–V characteristics of VDMOSFET and its corresponding effects in buck converter. Analysis of the electrical characteristics shows that after irradiation the threshold voltage and drain current for all VDMOSFETs degraded more than two orders of magnitude. The impact of this electrical degradation has been investigated in an application of typical buck converter circuit. The buck converter with n-channel switching transistor shows that after irradiation its output voltage increased with the drain current in the n-channel ZVN4424A VDMOSFET, while the buck converter with p-channel switching transistor shows its output voltage decreased with the drain current in the p-channel ZVP4424A VDMOSFET after irradiation.

Key words: VDMOSFET, I–V characteristics, Drain current, Buck converter, Electron radiation