# Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2017, Vol. 28 ›› Issue (1): 14

• NUCLEAR ELECTRONICS AND INSTRUMENTATION •

### Readout electronics for a high-resolution soft X-ray spectrometer based on silicon drift detector

Er-Lei Chen 1,2, Chang-Qing Feng 1,2, Shu-Bin Liu 1,2, Chun-Feng Ye 3, Dong-Dong Jin 4, Jian Lian4, Hui-Jun Hu4

1. 1 State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026, China
2 Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
3 705 Research Division, Electronic Engineering Institute, Hefei 230037, China
4 Shandong Aerospace Electro-technology Institute, Yantai 264670, China
• Contact: Chang-Qing Feng E-mail:fengcq@ustc.edu.cn
• Supported by:

This work was supported by the National Natural Science Foundation of China (Grant No. 11205154), which is gratefully acknowledged.

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Er-Lei Chen, Chang-Qing Feng, Shu-Bin Liu, Chun-Feng Ye, Dong-Dong Jin, Jian Lian, Hui-Jun Hu. Readout electronics for a high-resolution soft X-ray spectrometer based on silicon drift detector.Nuclear Science and Techniques, 2017, 28(1): 14
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Abstract:

The readout electronics for a prototype soft X-ray spectrometer based on silicon drift detector (SDD), for precisely measuring the energy and arrival time of X-ray photons is presented in this paper. The system mainly consists of two parts, i.e., an analog electronics section (including a pre-amplifier, a signal shaper and filter, a constant fraction timing circuit, and a peak hold circuit) and a digital electronics section (including an ADC and a TDC). Test results with X-ray sources show that an energy dynamic range of 1–10 keV with an integral nonlinearity of less than 0.1% can be achieved, and the energy resolution is better than 160 eV @ 5.9 keV FWHM. Using a waveform generator, test results also indicate that time resolution of the electronics system is about 3.7 ns, which is much less than the transit time spread of SDD (<100 ns) and satisfies the requirements of future applications.