Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2016, Vol. 27 ›› Issue (6): 144 doi: 10.1007/s41365-016-0149-8

• NUCLEAR ENERGY SCIENCE AND ENGINEERING • Previous Articles     Next Articles

Investigation of sensitivity and threshold voltage shift of commercial MOSFETs in gamma irradiation

Saleh Ashrafi 1, Baharak Eslami 2   

  1. 1 Faculty of Physics, University of Tabriz, P.O. Box 51666-16471, Tabriz, Iran
    2 Department of Physics, Payame Noor University, P.O. Box 19395-3697, Tehran, Iran
  • Contact: Saleh Ashrafi E-mail:ashrafi@tabrizu.ac.ir
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Saleh Ashrafi, Baharak Eslami. Investigation of sensitivity and threshold voltage shift of commercial MOSFETs in gamma irradiation.Nuclear Science and Techniques, 2016, 27(6): 144     doi: 10.1007/s41365-016-0149-8
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Abstract:

This article is about the absorbed-dose-dependent threshold voltage shift of the MOSFET transistors. Performance of the MOSFETs has been tested in different gate voltages. Sensitivity of the transistors for 662 keV gamma ray is studied in 1–5 Gy dose range. It was found that for transistors irradiated in biased mode, significant changes in the threshold voltage occurred, and the sensitivity to gamma rays increased with the bias voltage.

Key words: Dosimetry, Gamma radiation, 137Cs, Active and passive mode, P-channel,  MOSFET, Threshold voltage