Nuclear Science and Techniques

《核技术》(英文版) ISSN 1001-8042 CN 31-1559/TL     2019 Impact factor 1.556

Nuclear Science and Techniques ›› 2016, Vol. 27 ›› Issue (1): 16 doi: 10.1007/s41365-016-0014-9

• NUCLEAR ELECTRONICS AND INSTRUMENTATION • Previous Articles     Next Articles

Experimental study of temperature dependence of single-event upset in SRAMs

Li Cai, Gang Guo, Jian-Cheng Liu, Hui Fan, Shu-Ting Shi, Hui Wang, Gui-Liang Wang, Dong-Jun Shen, Ning HUI   

  1. China Institute of Atomic Energy, Beijing, 102413, China
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Li Cai, Gang Guo, Jian-Cheng Liu, Hui Fan, Shu-Ting Shi, Hui Wang, Gui-Liang Wang, Dong-Jun Shen, Ning HUI . Experimental study of temperature dependence of single-event upset in SRAMs.Nuclear Science and Techniques, 2016, 27(1): 16     doi: 10.1007/s41365-016-0014-9
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Abstract:

We report on the temperature dependence of single-event upsets in the 215–353 K range in a 4M commercial SRAM manufactured in a 0.15-μm CMOS process, utilizing thin film transistors. The experimental results show that temperature influences the SEU cross section on the rising portion of the cross-sectional curve (such as the chlorine ion incident). SEU cross section increases 257 % when the temperature increases from 215 to 353 K. One of the possible reasons for this is that it is due to the variation in upset voltage induced by changing temperature.

Key words: Cryogenic, Elevated temperature, Heavy ion, Single-event effects, Single-event upset