Nuclear Techniques ›› 2020, Vol. 43 ›› Issue (1): 10502-010502.doi: 10.11889/j.0253-3219.2020.hjs.43.010502

• NUCLEAR PHYSICS, INTERDISCIPLINARY RESEARCH • Previous Articles     Next Articles

Progress of single event effects and hardening technology of CMOS image sensors

Yulong CAI1,2,3,Yudong LI1,2,Lin WEN1,2,Qi GUO1,2()   

  1. 1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
    2. Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
    3. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2019-08-12 Revised:2019-11-27 Online:2020-01-15 Published:2020-01-21
  • Contact: Qi GUO E-mail:guoqi@ms.xjb.ac.cn
  • About author:CAI Yulong, male, born in 1992, graduated from Nantong University in 2016, doctoral student, focusing on space radiation effects of photoelectric devices
  • Supported by:
    National Natural Science Foundation of China(11675259);Defense Industrial Technology Development Program

Abstract: Background

CMOS imager sensors (CISs) used in the space radiation environments are susceptible to single event effects (SEEs), which can cause images corruption and even CIS function failure.

Purpose

This study aims to evaluate the progress of SEEs and hardening technology of CIS.

Methods

In this paper, the SEEs on the CIS are reviewed by summarizing the investigation from different particles such as heavy ions, protons, electrons and neutrons, and from different types of SEEs: including single event transient (SET), single event upset (SEU), single event functional interrupt (SEFI) and single event latch-up (SEL). Progresses of SEEs hardening technology on CIS are briefly investigated.

Results & Conclusions

This paper analyzes the SEEs and problems to be solved urgently on hardening technology on the CIS technology, which provides theoretical reference for further researches in the future.

Key words: CMOS image sensor, Single event effects, Radiation hardening technology, Space radiation

CLC Number: 

  • TN386