Nuclear Techniques ›› 2019, Vol. 42 ›› Issue (12): 120501-120501.doi: 10.11889/j.0253-3219.2019.hjs.42.120501


Radiation response characteristics of an embeddable SOI radiation sensor

Jing SUN1,Qi GUO1,Qiwen ZHENG1,Jiangwei CUI1,Chengfa HE1,Haitao LIU1,Xuqiang LIU2,Mengxin LIU3   

  1. 1. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
    2. Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621999, China
    3. Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2019-11-19 Revised:2019-11-28 Online:2019-12-10 Published:2019-12-18
  • About author:SUN Jing, female, born in 1981, graduated from Xinjiang University with a master's degree in 2008, focusing on radiation detection technology
  • Supported by:
    National Natural Science Foundation of China(11605283);the West Light Foundation of Chinese Academy of Sciences(2017-XBQNXZ-B-008)

Abstract: Background

With the rapid development of the aerospace industry, deep space environments, space stations, and long-life satellites have set higher requirements for space environment radiation dose detection technology. Positive channel metal oxide semiconductor (PMOS) tubes based on silicon-on-insulator buried oxide (SOI BOX) is one of key candidate device for next-generation radiation detectors of high-sensitivity and wide-range irradiation sensors.


This study aims to investigate radiation response characteristics of an embeddable SOI radiation sensor.


Comprehensive radiation experiments were preformed to study the influence of irradiation bias on the sensitivity of SOI BOX PMOS, the sensitivity response difference in various radiation dose rate, the annealing characteristics of SOI BOX PMOS after irradiation and its influence on the sensitivity of radiation response, and the relationship between the width to length ratio of SOI box PMOS and its sensitivity.


The results show that the sensitivity of SOI BOX PMOS to radiation dose is better than that of traditional bulk silicon sensor under the same cumulative dose, and the threshold voltage drift of SOI BOX PMOS under irradiation bias. The irradiation change of threshold voltage is almost unaffected by annealing effect. Compared with wide-channel devices, threshold voltage drift of narrow-channel device is more obvious.


Through the design of the SOI BOX PMOSFET (Positive channel Metal Oxide Semiconductor Field-Effect Transistor) structure, important research results such as adjusting the sensitivity of the detector and balancing the relationship with the range have important application value for the development of the next generation of new radiation dose detector.

Key words: RADFET sensors, SOI PMOSFET, Dosimeter

CLC Number: 

  • TL99