VDMOS电离辐射效应快速评估方法

doi:10.11889/j.0253-3219.2020.hjs.43.050503

Nuclear Techniques ›› 2020, Vol. 43 ›› Issue (5): 50503-050503.doi: 10.11889/j.0253-3219.2020.hjs.43.050503

• NUCLEAR PHYSICS, INTERDISCIPLINARY RESEARCH • Previous Articles Next Articles

A fast evaluation method for ionization radiation effect of VDMOS

Shuai CUI¹,Yiyuan WANG²,Cai LI¹,Jian LU¹,Bin CHEN¹

^1.Innovation Academy for Micro-satellites of CAS, Shanghai 201044, China
^2.Aerospace Systems Engineering Shanghai, Shanghai 201109, China

Received:2019-09-05 Revised:2019-12-17 Online:2020-05-15 Published:2020-05-07
About author:CUI Shuai, male, born in 1976, graduated from University of Chinese Academy of Sciences with a master's degree in 2005, focusing on reliability of electronic components

Abstract

Abstract: Background

Vertical Double-diffused MOSFET (VDMOS) is widely used in space equipment, its radiation resistance needs to be evaluated due to ionizing radiation in space environment. According to the national military standard, the normal stipulated method of normal temperature irradiation with additional 50% dose and 168 h high temperature annealing has a long test period for evaluating ionizing radiation evaluation of VDMOS.

Purpose

This study aims to shorten the test period by developing a fast method to evaluate the ionizing radiation effect of VDMOS.

Methods

High temperature irradiation was adopted for high voltage VDMOS ionizing radiation experiments. Radiation resistance of typical VDMOS digital circuits in large dose range at the temperature of 100 °C was compared with the results of the National Military Standard test.

Results

Experimetial results show that the high temperature radiation test for evaluating the radiation resistance of high voltage VDMOS in a larger dose range has quivalent effect to the national military standard method but save 168 h of annealing time.

Conclusions

High temperature irradiation can be used as rapid evaluation method for ionizing radiation resistance of high voltage VDMOS devices.

Key words: VDMOS, Ionizing radiation effect, Assessment methods, Elevated temperature irradiation

CLC Number:

TL99

Shuai CUI, Yiyuan WANG, Cai LI, Jian LU, Bin CHEN. A fast evaluation method for ionization radiation effect of VDMOS[J].Nuclear Techniques, 2020, 43(5): 50503-050503.

Figures/Tables 7

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References 10

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器件名称Device	器件特性 Characteristics of device	工艺尺寸 Feature sizes / μm	栅氧厚度 Gate oxygen thickness / nm
7130	击穿电压100 V V_break=100 V	4.0~8.0	60~150
7230	击穿电压200 V V_break=200 V	4.0~8.0	60~150
CC4069	―	8.0	60
54AC08	―	0.18	15

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A fast evaluation method for ionization radiation effect of VDMOS

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