Nuclear Techniques ›› 2020, Vol. 43 ›› Issue (5): 50503-050503.doi: 10.11889/j.0253-3219.2020.hjs.43.050503


A fast evaluation method for ionization radiation effect of VDMOS

Shuai CUI1,Yiyuan WANG2,Cai LI1,Jian LU1,Bin CHEN1   

  1. 1.Innovation Academy for Micro-satellites of CAS, Shanghai 201044, China
    2.Aerospace Systems Engineering Shanghai, Shanghai 201109, China
  • Received:2019-09-05 Revised:2019-12-17 Online:2020-05-15 Published:2020-05-07
  • About author:CUI Shuai, male, born in 1976, graduated from University of Chinese Academy of Sciences with a master's degree in 2005, focusing on reliability of electronic components

Abstract: Background

Vertical Double-diffused MOSFET (VDMOS) is widely used in space equipment, its radiation resistance needs to be evaluated due to ionizing radiation in space environment. According to the national military standard, the normal stipulated method of normal temperature irradiation with additional 50% dose and 168 h high temperature annealing has a long test period for evaluating ionizing radiation evaluation of VDMOS.


This study aims to shorten the test period by developing a fast method to evaluate the ionizing radiation effect of VDMOS.


High temperature irradiation was adopted for high voltage VDMOS ionizing radiation experiments. Radiation resistance of typical VDMOS digital circuits in large dose range at the temperature of 100 °C was compared with the results of the National Military Standard test.


Experimetial results show that the high temperature radiation test for evaluating the radiation resistance of high voltage VDMOS in a larger dose range has quivalent effect to the national military standard method but save 168 h of annealing time.


High temperature irradiation can be used as rapid evaluation method for ionizing radiation resistance of high voltage VDMOS devices.

Key words: VDMOS, Ionizing radiation effect, Assessment methods, Elevated temperature irradiation

CLC Number: 

  • TL99