Nuclear Techniques ›› 2019, Vol. 42 ›› Issue (11): 110401-110401.doi: 10.11889/j.0253-3219.2019.hjs.42.110401

• NUCLEAR ELECTRONICS AND INSTRUMENTATION • Previous Articles     Next Articles

Experimental study on irradiation damage dose of 180 nm CMOS MCU

Faguo CHEN,Rong GUO,Guodong LI,Runcheng LIANG,Yi HAN,Mingming YANG   

  1. China Institute for Radiation Protection, Taiyuan 030006, China
  • Received:2019-07-01 Revised:2019-09-26 Online:2019-11-10 Published:2019-11-18
  • About author:CHEN Faguo, male, born in 1987, graduated from China Institute for Radiation Protection in 2011, master student, focusing on radiation protection technology
  • Supported by:
    National Science and Technology Major Project(2017ZX06906010)

Abstract: Background

The radiation effects of semiconductor devices include single event upset effect, total ionizing dose effect and dose rate effect. The total ionizing dose effect on electronic systems becomes a priority for the improvement of reliability of radiation-tolerance robots.

Purpose

This study aims to measure the irradiation damage dose of STM32 microcontroller unit fabricated by 180 nm complementary metal oxide semiconductor(CMOS) technology with on-line and off-line experimental testing approaches.

Methods

A test system which consisted of minimum circuits, dosimeter, communication circuit and host computer was developed. On-line and off-line irradiation experiments were performed on 89 samples using 60Co source with different dose rates. Among these samples, 14 samples were on-line irradiated under 63.3 Gy(Si)?h-1 and 101.2 Gy(Si)?h-1 dose rates whilst 75 samples were off-line irradiated under dose rates range of 227.2 Gy(Si)?h-1 to 855.0 Gy(Si)?h-1.

Results

The irradiation damage dose are (235.4±16.4) Gy(Si) and (197.4±13.0) Gy(Si), respectively, corresponding to the on-line testing with 63.3 Gy(Si)?h-1 and 101.2 Gy(Si)?h-1 dose rates. The irradiation damage dose of off-line testing is between 391.5 Gy(Si) and 497.6 Gy(Si).

Conclusions

On chip flash memory is the first damaged hardware unit in STM32 microprocessor, and the tolerant dose limit of off-line test is significantly higher than that of on-line test.

Key words: Total ionizing dose effect, Irradiation damage dose, STM32, On-line testing, Off-line testing

CLC Number: 

  • TL99