Nuclear Techniques ›› 2019, Vol. 42 ›› Issue (11): 110401-110401.doi: 10.11889/j.0253-3219.2019.hjs.42.110401


Experimental study on irradiation damage dose of 180 nm CMOS MCU

Faguo CHEN,Rong GUO,Guodong LI,Runcheng LIANG,Yi HAN,Mingming YANG   

  1. China Institute for Radiation Protection, Taiyuan 030006, China
  • Received:2019-07-01 Revised:2019-09-26 Online:2019-11-10 Published:2019-11-18
  • About author:CHEN Faguo, male, born in 1987, graduated from China Institute for Radiation Protection in 2011, master student, focusing on radiation protection technology
  • Supported by:
    National Science and Technology Major Project(2017ZX06906010)

Abstract: Background

The radiation effects of semiconductor devices include single event upset effect, total ionizing dose effect and dose rate effect. The total ionizing dose effect on electronic systems becomes a priority for the improvement of reliability of radiation-tolerance robots.


This study aims to measure the irradiation damage dose of STM32 microcontroller unit fabricated by 180 nm complementary metal oxide semiconductor(CMOS) technology with on-line and off-line experimental testing approaches.


A test system which consisted of minimum circuits, dosimeter, communication circuit and host computer was developed. On-line and off-line irradiation experiments were performed on 89 samples using 60Co source with different dose rates. Among these samples, 14 samples were on-line irradiated under 63.3 Gy(Si)?h-1 and 101.2 Gy(Si)?h-1 dose rates whilst 75 samples were off-line irradiated under dose rates range of 227.2 Gy(Si)?h-1 to 855.0 Gy(Si)?h-1.


The irradiation damage dose are (235.4±16.4) Gy(Si) and (197.4±13.0) Gy(Si), respectively, corresponding to the on-line testing with 63.3 Gy(Si)?h-1 and 101.2 Gy(Si)?h-1 dose rates. The irradiation damage dose of off-line testing is between 391.5 Gy(Si) and 497.6 Gy(Si).


On chip flash memory is the first damaged hardware unit in STM32 microprocessor, and the tolerant dose limit of off-line test is significantly higher than that of on-line test.

Key words: Total ionizing dose effect, Irradiation damage dose, STM32, On-line testing, Off-line testing

CLC Number: 

  • TL99