次级电子不平衡对CMOS器件敏感区吸收剂量和电离总效应的影响

doi:10.11889/j.0253-3219.2019.hjs.42.070203

Nuclear Techniques ›› 2019, Vol. 42 ›› Issue (7): 0-070203-6.doi: 10.11889/j.0253-3219.2019.hjs.42.070203

• ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS •

Effect of secondary electron non-equilibrium on the absorbed doses of CMOS device sensitive area and total ionizing dose effect

Yuankun WANG,Qian WANG(),Tao WANG,Jing LIU

School of Physics and Technology, Xinjiang University, Urumqi 830046, China

Received:2019-04-11 Revised:2019-04-23 Online:2019-07-10 Published:2019-07-16
Contact: Qian WANG E-mail:wq@xju.edu.cn
About author:WANG Yuankun, male, born in 1992, graduated from Hankou University in 2015, master student, focusing on radiation dosimetry
Supported by:
Supported by National Natural Science Foundation of China(No.11765022)

Abstract

Abstract: Background

Absorbed dose is the most important physical quantity in the study of radiation effect. In the total ionizing dose experiment of ⁶⁰Co gamma ray, the secondary electron equilibrium condition is not satisfied in the sensitive area of a thinner device. The actual absorbed dose could be less than the irradiation dose measured by the same dosimeter.

Purpose

This study aims to analyze and evaluate the influence extent of secondary electron imbalance on the absorbed dose and total ionizing dose of the sensitive layer of the device.

Methods

By studying the total ionizing dose effect with ⁶⁰Co γ-rays on complementary metal oxide semiconductor (CMOS) device “CC4069 inverters", the difference between the absorbed doses of the sensitive layer of CC4069 inverters and the nominal irradiation dose measured by the dosimeter was calculated by Monte Carlo simulation. Combined with the measurement of the threshold voltage of the irradiation sensitive parameter of CC4069 inverter, the relationship between the threshold voltage drift of positive channel metal oxide semiconductor (PMOS) and negative channel metal oxide semiconductor (NMOS) under different bias conditions and the nominal irradiation dose and absorbed dose corrected by Monte Carlo simulation were analyzed and compared.

Results

The results show that the absorbed dose of the device sensitive layer is only 83.52% of the nominal irradiation dose.

Conclusion

The radiation test under the condition of secondary electron non-equilibrium will affect the evaluation of radiation hardening of device, and the radiation hardening of the device is overestimated by 16.5%.

Key words: Total ionizing dose effect, Secondary electron equilibrium, Absorbed dose, Monte Carlo simulation

CLC Number:

TL72

Yuankun WANG,Qian WANG,Tao WANG,Jing LIU. Effect of secondary electron non-equilibrium on the absorbed doses of CMOS device sensitive area and total ionizing dose effect[J].Nuclear Techniques, 2019, 42(7): 0-070203-6.

Figures/Tables 6

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Table 1

Table 2

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References 15

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序号 Number	材料 Material	厚度 Thickness / μm	密度 Density / g?cm^-3
1	Plastic	1 500	1.19
2	Si₃N₄	0.2	3.1
3	Al	1.2	2.699
4	SiO₂	0.1	2.2
5	Si	200	2.33
6	Plastic	1 500	1.19
7	PCB	2 000	1.19

序号 Number	材料 Material	厚度 Thickness / μm	剂量 Dose / Gy	与标称剂量的偏差 Deviation from the nominal dose / %
1	Plastic	1 500	46.60	53.40
2	Si₃N₄	0.2	80.32	19.68
3	Al	1.2	73.50	26.50
4	SiO₂	0.1	83.52	16.48
5	Si	200	76.79	23.21
6	Plastic	1 500	99.05	0.95
7	PCB	2 000	99.96	0.04

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Effect of secondary electron non-equilibrium on the absorbed doses of CMOS device sensitive area and total ionizing dose effect

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