Nuclear Techniques ›› 2019, Vol. 42 ›› Issue (5): 50501-050501.doi: 10.11889/j.0253-3219.2019.hjs.42.050501

• NUCLEAR PHYSICS, INTERDISCIPLINARY RESEARCH • Previous Articles     Next Articles

Study of the characteristics of an irradiated 4H-SiC charge particle detector

Chong HAN1,2,4,Xingzhu CUI2(),Xiaohua LIANG2,4,Hongwei LIANG3,Xiaochuan XIA3,Cun YANG1,2,4,Xin YE3,Jilong TANG1,Dengkui WANG1,Zhipeng WEI1   

  1. 1. National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
    2. Key Laboratory of Particle Astrophysics, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
    3. School of Microelectronics, Dalian University of Technology, Dalian 116024, China
    4. State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • Received:2018-12-27 Revised:2019-02-26 Online:2019-05-10 Published:2019-05-16
  • Contact: Xingzhu CUI E-mail:cuixingzhu@ihep.ac.cn
  • About author:HAN Chong, male, born in 1993, graduated from College of Optical and Electronical Information Changchun University of Science and Technology in 2016, master student, focusing on semiconductor optoelectronic device physics|HAN Chong, male, born in 1993, graduated from College of Optical and Electronical Information Changchun University of Science and Technology in 2016, master student, focusing on semiconductor optoelectronic device physics|CUI Xingzhu, E-mail: cuixingzhu@ihep.ac.cn
  • Supported by:
    Supported by National Natural Science Foundation of China (No.11675198), Foundation of State Key Laboratory of Particle Detection and Electronics(No.SKLPDE-ZZ-201810)

Abstract: Background

Silicon carbide is considered as a representative wide band gap semiconductor material for high temperature and radiation resistance devices due to its physical properties of wide band gap and high threshold displacement energy.

Purpose

This study aims to investigate the effects of irradiation on the electrical properties of the 4H-SiC Schottky diode detector and the energy resolution of the α-particle response.

Methods

The 4H-SiC Schottky diode detector was irradiated with 60Co source gamma-rays. The forward current and reverse bias voltage of the detector were observed. [Results & Conlusion] After γ-rays irradiation with total absorbed dose of 1 000 kGy, the forward current of the detector decreases by three orders of magnitude compared with that before irradiation. The reverse current value does not change at 0~120 V bias voltage. When the reverse bias voltage is higher than 120 V, the reverse current value changes obviously. At the same time, there is no significant change in the energy resolution of α-particle before and after irradiation.

Key words: 4H-SiC, Schottky diode, γ-rays, Detector, Electrical properties, Energy resolution

CLC Number: 

  • TL814