核探测器前端电子学线性稳压器设计

doi:10.11889/j.0253-3219.2019.hjs.42.050403

Nuclear Techniques ›› 2019, Vol. 42 ›› Issue (5): 50403-050403.doi: 10.11889/j.0253-3219.2019.hjs.42.050403

• NUCLEAR ELECTRONICS AND INSTRUMENTATION • Previous Articles Next Articles

The design of a low-dropout voltage regulator used in the front-end electronics nuclear detect

Junying CHAI^1,^2,^3,^4,⁵,Xiaoshan JIANG¹(),Yongjie ZHANG^1,³,Yongwei DONG^1,³,Feng SHI^1,³,Lu LI^1,³,Weishuai CHENG^1,^2,^4,⁵,Chongyang LENG^1,^2,^4,⁵,Zheng WANG¹,Bobing WU^1,³

1. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
2. University of Chinese Academy of Sciences, Beijing 100049, China
3. Key Laboratory of Particle and Astrophysics, Chinese Academy of Sciences, Beijing 100049, China
4. Department of Electronics and Telecommunications, Politecnico di Torino, Torino 10129, Italy
5. Istituto Nazionale di Fisica Nucleare, Sezione di Torino, Torino 10125, Italy

Received:2017-07-15 Revised:2018-01-17 Online:2019-05-10 Published:2019-05-16
Contact: Xiaoshan JIANG E-mail:jiangxs@ihep.ac.cn
About author:CHAI Junying, male, born in 1982, graduated from University of Chinese Academy of Sciences with a doctoral degree in 2018, focusing on the design of front-end electronic integrated circuits for high-energy particle detectors|CHAI Junying, male, born in 1982, graduated from University of Chinese Academy of Sciences with a doctoral degree in 2018, focusing on the design of front-end electronic integrated circuits for high-energy particle detectors|JIANG Xiaoshan, E-mail: jiangxs@ihep.ac.cn
Supported by:
Supported by Self-deployed by Institute of High Energy Physics, Chinese Academy of Sciences (No.Y8546160U2), Key Basic Research Development Plan (No.2014CB845800), National Key Research and Development Plan Project (No.2016YFA040080X), National Natural Science Foundation of China(No.11327303HE, No.11503028, No.11473028, No.11375218, No.11575206)

种类 Sort	尺寸（宽/长） Size (width / length)
M₀₁~M₀₂	50 / 0.5 μm
M₀~M₁	50 / 0.2 μm
M₂~M₃	25 / 0.34 μm
M₄	400 / 0.12 μm
M₅	25 / 0.12 μm
M₆	50 / 0.12 μm
M₇	3 000 / 0.12 μm
R₁~R₂	10 kΩ
R₃	150 Ω
R₄	50 Ω

参数Parameters	文献[7]Ref.[7]	文献[8]Ref.[8]	文献[9]Ref.[9]	文献[10]Ref.[10]	本文This work
年份Year	2013	2015	2016	2016	2016
技术Technology / μm	0.11	0.18	0.5	0.18	0.13
输入电压V_in / V	1.8~3.8	1.4~1.8	2.3~5.5	1.0~1.4	1.4~2.2
输出电压V_out / V	1.2	1.2	1.2~5.4	0.9	1.2
输出电流I_out / mA	200	100	150	0.5	200
静态电流I_quiescent / μA	41.5	141	40	10.3	2 000
压差V_dropout / mV	200	200	100	100	140
下冲Undershoot / mV	385	110	96	64	130
上冲Overshoot / mV	200	85	120	64	130
电压峰峰值V_outpp / mV	585	195	216	128	260
电流峰峰值I_outpp / mA	199.5	99.99	150	0.25	200
稳定时间Set time / μs	0.65	30	3	3	0.4
面积Area / mm²	0.11	0.07	0.279	0.012	0.003 7
优值FOM / 10⁵	33	96	107	126	34

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8	MaityA, PatraA. Tradeoffs aware design procedure for an adaptively biased capacitorless low dropout regulator using nested miller compensation[J]. Power Electronics, IEEE Transactions on, 2016, 31(1): 369–380. DOI: 10.1109/tpel.2015.2398868. doi: 10.1109/tpel.2015.2398868
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The design of a low-dropout voltage regulator used in the front-end electronics nuclear detect

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