Nuclear Techniques ›› 2019, Vol. 42 ›› Issue (5): 50402-050402.doi: 10.11889/j.0253-3219.2019.hjs.42.050402

• NUCLEAR ELECTRONICS AND INSTRUMENTATION • Previous Articles     Next Articles

Research and application of silicon carbide diode in high voltage power supply

Maomao HUANG1,2,3,Rui LI1,Deming LI3(),Jukui WEI4,Wanfeng WU1,Yanyan ZHU1   

  1. 1. Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China
    2. University of Chinese Academy of Sciences, Beijing 100049, China
    3. Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China
    4. Nanjing FSP-Powerland Technology Inc, Nanjing 210014, China
  • Received:2019-01-11 Revised:2019-02-22 Online:2019-05-10 Published:2019-05-16
  • Contact: Deming LI E-mail:lideming@sinap.ac.cn
  • About author:HUANG Maomao, male, born in 1977, graduated from Nanchang Institute of Technology in 1999, doctoral student, focusing on nuclear technology and application|HUANG Maomao, male, born in 1977, graduated from Nanchang Institute of Technology in 1999, doctoral student, focusing on nuclear technology and application|LI Deming, E-mail: lideming@sinap.ac.cn
  • Supported by:
    Supported by National Key R&D Program of China(No.2016YFA0401902)

Abstract: Background

High voltage charging power supply is developed from the requirement of pulse modulation high voltage power supply. The power supply structure consists of a planar insulated core transformer in series with multiple output coils. Therefore, many rectifier diodes are used accordingly. Critical power loss of rectifier diodes has direct influence on the temperature rise of sealed output structure of power supply.

Purpose

This study aims to reduce the influence of diode power loss according to the operating characteristics of the diode and determine the selection principle of the diode.

Methods

Based on the relationship between the current turn-off slope and reverse recovery peak current of various diodes, circuit simulation and parametric analysis of common diodes, fast recovery diodes and silicon carbide Schottky diodes were carried out, silicon carbide diodes C4D05120E (1 200 V 9 A) was selected as high-voltage rectifier diode to design high voltage rectifier circuit.

Results

The high voltage power supply operates at 70% load, and the temperature rise caused by the loss of power of silicon carbide diode is within 2°.

Conclusion

The application of silicon carbide diode improves the power loss of high voltage power rectifier diodes. With the increase of switching frequency of high voltage power supply, the advantages of silicon carbide diode will be more obvious.high voltage power supply, the advantages of silicon carbide diode will be more obvious.

Key words: Planar transformer, LLC resonance, Silicon carbide diode, High voltage power supply

CLC Number: 

  • TL99