Nuclear Techniques ›› 2016, Vol. 39 ›› Issue (12): 120502-120502.doi: 10.11889/j.0253-3219.2016.hjs.39.120502

• NUCLEAR PHYSICS, INTERDISCIPLINARY RESEARCH • Previous Articles     Next Articles

Analysis and simulation of dielectric deep charging effect for satellites

AN Heng1, XUE Yuxiong1, YANG Shengsheng1, ZHUANG Kai2, QIN Xiubo2, WANG Jun1   

  1. 1 Key Laboratory of Vacuum Technology and Physics, Lanzhou Institute of Space Technology and Physics, Lanzhou 730000, China;
    2 Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • Received:2016-08-30 Revised:2016-09-19 Online:2016-12-10 Published:2016-12-10
  • Supported by:

    Supported by National Natural Science Foundation of China (No.11305084)

Abstract:

Background: Dielectric deep charge-discharge caused by interaction with energetic particles is always a threat to the safe operation of spaceflight. The long-time operation and flight in MEO and GEO would induce dielectric deep charge-discharge effect caused by energetic electron to become more and more serious. Purpose: The aim is to propose an analytic model for dielectric deep charging. Methods: The potentials of dielectric at certain depths are described by measurements of the potential of metallic layers inserted. Results: Simulations of two-type samples have been done based on Monto Carlo method and electric analyzing program, with one made of pure dielectric and the other consisting of both dielectric layers and metallic layers. Samples made of different thickness of dielectric layers and metallic layers, suitable thickness of dielectric layers and metallic layers can be determined aiding to design of the probe. Conclusion: The simulation result indicates that the model can be used to obtain dielectric deep charging characteristics effectively, which is beneficial to detector development of space radiation effect in future.

Key words: Dielectric material, Deep charging effect, Tetrafunctional Epoxy Resin (FR4), Charge deposition, Numerical simulation

CLC Number: 

  • TL99